| 1 |
Ta/SiCN bilayer barrier for Cu-ultra low k integration
Zhang DH, Yang LY, Li CY, Lu PW, Foo PD
Thin Solid Films, 504(1-2), 235, 2006 |
| 2 |
Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
Yang LY, Zhang DH, Li CY, Liu R, Lu PW, Foo PD, Wee ATS
Thin Solid Films, 504(1-2), 265, 2006 |
| 3 |
Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration
Yang LY, Zhang DH, Li CY, Foo PD
Thin Solid Films, 462-63, 176, 2004 |
| 4 |
Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnects
Yang LY, Zhang DH, Li CY, Liu R, Wee ATS, Foo PD
Thin Solid Films, 462-63, 182, 2004 |
| 5 |
Reduction of oxygen plasma damage by postdeposition helium plasma treatment for carbon-doped silicon oxide low dielectric constant films
Wang YH, Gui D, Kumar R, Foo PD
Electrochemical and Solid State Letters, 6(1), F1, 2003 |
| 6 |
Characterization of carbon-doped SiO2 low k thin films -Preparation by plasma-enhanced chemical vapor deposition from tetramethylsilane
Han LCM, Pan JS, Chen SM, Balasubramanian N, Shi JN, Wong LS, Foo PD
Journal of the Electrochemical Society, 148(7), F148, 2001 |
