화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
Ru GP, Van Meirhaeghe RL, Forment S, Jiang YL, Qu XP, Zhu SY, Li BZ
Solid-State Electronics, 49(4), 606, 2005
2 The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
Leroy WP, Opsomer K, Forment S, Van Meirhaeghe RL
Solid-State Electronics, 49(6), 878, 2005
3 Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts
Zhu SY, Van Meirhaeghe RL, Forment S, Ru GP, Li BZ
Solid-State Electronics, 48(1), 29, 2004
4 Schottky barrier characteristics of ternary silicide Co1-xNixSi2 on n-Si(100) contacts formed by solid phase reaction of multilayer
Zhu SY, Van Meirhaeghe RL, Forment S, Ru GP, Qu XP, Li BZ
Solid-State Electronics, 48(7), 1205, 2004