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| No. | Article |
|---|---|
| 1 |
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget Grahn JV, Fosshaug H, Jargelius M, Jonsson P, Linder M, Malm BG, Mohadjeri B, Pejnefors J, Radamson HH, Sanden M, Wang YB, Landgren G, Ostling M Solid-State Electronics, 44(3), 549, 2000 |