검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
SOI versus bulk-silicon nanoscale FinFETs Fossum JG, Zhou ZM, Mathew L, Nguyen BY Solid-State Electronics, 54(2), 86, 2010 |
| 2 |
Physical insights on nanoscale multi-gate CMOS design Fossum JG Solid-State Electronics, 51(2), 188, 2007 |
| 3 |
Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies Trivedi VP, Fossum JG, Zhang WM Solid-State Electronics, 51(1), 170, 2007 |
| 4 |
Nanoscale CMOS: potential nonclassical technologies versus a hypothetical bulk-silicon technology Kim SH, Fossum JG Solid-State Electronics, 49(4), 595, 2005 |
| 5 |
A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits Yang JW, Fossum JG, Workman GO, Huang CL Solid-State Electronics, 48(2), 259, 2004 |
| 6 |
A process/physics-based compact model for nonclassical CMOS device and circuit design Fossum JG, Ge L, Chiang MH, Trivedi VP, Chowdhury MM, Mathew L, Workman GO, Nguyen BY Solid-State Electronics, 48(6), 919, 2004 |
| 7 |
Achieving the ballistic-limit current in Si MOSFETs Kim K, Fossum JG Solid-State Electronics, 47(4), 721, 2003 |