| 1 |
Leakage current conduction in metal gate junctionless nanowire transistors
Oproglidis TA, Karatsori TA, Barraud S, Ghibaudo G, Dimitriadis CA
Solid-State Electronics, 131, 20, 2017 |
| 2 |
Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC
Shukla M, Dutta G, Mannam R, DasGupta N
Thin Solid Films, 607, 1, 2016 |
| 3 |
Germanium nanoparticles grown at different deposition times for memory device applications
Mederos M, Mestanza SNM, Lang R, Doi I, Diniz JA
Thin Solid Films, 611, 39, 2016 |
| 4 |
Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms
Yao B, Zhu YY, Fang ZB, Tan YS, Liu SY, Yuan JJ, Qiu QL
Thin Solid Films, 611, 52, 2016 |
| 5 |
Strongly Bias-Dependent Tunnel Magnetoresistance in Manganite Spin Filter Tunnel Junctions
Prasad B, Zhang WR, Jian J, Wang HY, Blamire MG
Advanced Materials, 27(19), 3079, 2015 |
| 6 |
Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices
Kodigala SR, Chattopadhyay S, Overton C, Ardoin I
Solid-State Electronics, 114, 104, 2015 |
| 7 |
Current conduction mechanisms of RF-Magnetron sputtered Y2O3 gate oxide on gallium nitride
Quah HJ, Cheong KY
Current Applied Physics, 13(7), 1433, 2013 |
| 8 |
An embedded nonvolatile memory cell with spacer floating gate for power management integrated circuit applications
Na KY, Baek KJ, Lee GW, Kim YS
Solid-State Electronics, 86, 32, 2013 |
| 9 |
Electrical and magnetoelectronic properties of La0.7Sr0.3MnO3/SiO2/p-Si heterostructure for spintronics application
Chattopadhyay S, Nath TK
Current Applied Physics, 11(5), 1153, 2011 |
| 10 |
Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
Miranda E, Palumbo F
Solid-State Electronics, 61(1), 93, 2011 |
