검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGeHBTs Liang QQ, Krithivasan R, Ahmed A, Lu Y, Li Y, Cressler JD, Niu GF, Rieh JS, Freeman G, Ahlgren D, Joseph A Solid-State Electronics, 50(6), 964, 2006 |
| 2 |
The revolution in SiGe: impact on device electronics Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S Applied Surface Science, 224(1-4), 9, 2004 |
| 3 |
Design and optimization of a 200 GHz SiGeHBT collector profile by TCAD Stricker AD, Johnson JB, Freeman G, Rieh JS Applied Surface Science, 224(1-4), 324, 2004 |
| 4 |
A doping concentration-dependent upper limit of the breakdown voltage-cutoff frequency product in Si bipolar transistors Rieh JS, Jagannathan B, Greenberg D, Freeman G, Subbanna S Solid-State Electronics, 48(2), 339, 2004 |
| 5 |
On the scaling limits of low-frequency noise in SiGeHBTs Johansen JA, Jin ZR, Cressler JD, Cui Y, Niu GF, Liang QQ, Rieh JS, Freeman G, Ahlgren D, Joseph A Solid-State Electronics, 48(10-11), 1897, 2004 |