화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 왕복요동 교반조의 자유 표면에서의 산소흡수속도
고승태
Korean Chemical Engineering Research, 59(2), 276, 2021
2 Experimental investigation of fluidized bed dynamics under resonant frequency of sound waves
Al-Ghurabi EH, Ali SS, Alfadul SM, Shahabuddin M, Asif M
Advanced Powder Technology, 30(11), 2812, 2019
3 Crystal structure and tribological properties of molybdenum disulfide films prepared by magnetron sputtering technology
Gong CY, Xiao JR, Zhu LW, Qi M, Ma SS
Current Applied Physics, 19(12), 1318, 2019
4 Analysis of Low-Frequency Stability in Grid-Tied DFIGs by Nonminimum Phase Zero Identification
Wang D, Liang L, Hu JB, Chang NC, Hou YH
IEEE Transactions on Energy Conversion, 33(2), 716, 2018
5 In house designed magnetron sputtering source: Effect of power and annealing on structural, optical and magnetic properties of NiFe2-xLuxO4 (x=0, 0.075) thin films
Kodam U, Baby KBA, Markandeyulu G
Thin Solid Films, 662, 180, 2018
6 Partitioned Operation Method for Reactive Oxygen Species Reactor Array at Atmospheric Pressure
Yu Z, Zhang ZT, Xu SJ, Zhang YG, Liu P, Tian YP
Plasma Chemistry and Plasma Processing, 37(2), 475, 2017
7 Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafers
Garcia-Valenzuela JA, Rivera R, Morales-Vilches AB, Gerling LG, Caballero A, Asensi JM, Voz C, Bertomeu J, Andreu J
Thin Solid Films, 619, 288, 2016
8 Sonochemical degradation of perfluorinated surfactants: Power and multiple frequency effects
Campbell T, Hoffmann MR
Separation and Purification Technology, 156, 1019, 2015
9 Influence of sputtering power on oxygen reduction reaction activity of zirconium oxides prepared by radio frequency reactive sputtering
Liu Y, Ishihara A, Mitsushima S, Ota K
Electrochimica Acta, 55(3), 1239, 2010
10 Deposition damage evaluation of fluorine doped silicon oxide using simple damage monitoring system
Kim DH, Kim B, Lee J, Song JT
Thin Solid Films, 518(22), 6482, 2010