화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R, Moustakas TD
Journal of Crystal Growth, 278(1-4), 387, 2005
2 Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1(1)over-bar-00) and (0001) GaN
Bhattacharyya A, Friel I, Iyer S, Chen TC, Li W, Cabalu J, Fedyunin Y, Ludwig KF, Moustakas TD, Maruska HP, Hill DW, Gallagher JJ, Chou MC, Chai B
Journal of Crystal Growth, 251(1-4), 487, 2003
3 High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors
Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I
Journal of Vacuum Science & Technology B, 20(3), 1229, 2002