검색결과 : 11건
No. | Article |
---|---|
1 |
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure Chen TP, Fu SI, Lour WS, Tsai JH, Guo DF, Liu WC Electrochemical and Solid State Letters, 10(2), H56, 2007 |
2 |
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors Lai PH, Liu RC, Fu SI, Tsai YY, Hung CW, Chen TP, Liu WC Journal of the Electrochemical Society, 154(3), H134, 2007 |
3 |
Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates Lai PH, Liu RC, Fu SI, Tsai YY, Hung CW, Chen TP, Chen CW, Liu WC Journal of the Electrochemical Society, 154(3), H205, 2007 |
4 |
Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance Fu SI, Chen TP, Liu RC, Cheng SY, Lai PH, Tsai YY, Hung CW, Liu WC Journal of the Electrochemical Society, 154(4), H289, 2007 |
5 |
Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors Fu SI, Liu RC, Cheng SY, Lai PH, Tsai YY, Hung CW, Chen TP, Liu WC Journal of Vacuum Science & Technology B, 25(3), 691, 2007 |
6 |
Improved performance of a dual-passivated heterojunction bipolar transistor Cheng SY, Fu SI, Liu WC Journal of Vacuum Science & Technology B, 25(3), 734, 2007 |
7 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation Fu SI, Lai PH, Tsai YY, Hung CW, Yen CH, Cheng SY, Liu WC Applied Surface Science, 252(22), 7755, 2006 |
8 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode Tsai YY, Hung CW, Fu SI, Lai PH, Chen HI, Liu WC Electrochemical and Solid State Letters, 9(11), H108, 2006 |
9 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor Lai H, Fu SI, Tsai YY, Hung CW, Yen CH, Chuang HM, Liu WC Journal of the Electrochemical Society, 153(7), G632, 2006 |
10 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor Fu SI, Cheng SY, Lai PH, Tsai YY, Hung CW, Yen CH, Liu WC Journal of the Electrochemical Society, 153(11), G938, 2006 |