검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam Uedono A, Tsukada Y, Mikawa Y, Mochizuki T, Fujisawa H, Ikeda H, Kurihara K, Fujito K, Terada S, Ishibashi S, Chichibu SF Journal of Crystal Growth, 448, 117, 2016 |
| 2 |
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Kelchner KM, Kuritzky LY, Fujito K, Nakamura S, DenBaars SP, Speck JS Journal of Crystal Growth, 382, 80, 2013 |
| 3 |
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes Farrell RM, Haeger DA, Chen X, Iza M, Hirai A, Kelchner KM, Fujito K, Chakraborty A, Keller S, DenBaars SP, Speck JS, Nakamura S Journal of Crystal Growth, 313(1), 1, 2010 |
| 4 |
Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S Journal of Crystal Growth, 311(3), 470, 2009 |
| 5 |
Bulk GaN crystals grown by HVPE Fujito K, Kubo S, Nagaoka H, Mochizuki T, Namita H, Nagao S Journal of Crystal Growth, 311(10), 3011, 2009 |
| 6 |
Status and perspectives of the ammonothermal growth of GaN substrates Hashimoto T, Wu F, Saito M, Fujito K, Speck JS, Nakamura S Journal of Crystal Growth, 310(5), 876, 2008 |
| 7 |
Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes Yamada H, Iso K, Masui H, Saito M, Fujito K, DenBaars SP, Nakamura S Journal of Crystal Growth, 310(23), 4968, 2008 |
| 8 |
Seeded growth of GaN by the basic ammonothermal method Hashimoto T, Saito M, Fujito K, Wu F, Speck JS, Nakamura S Journal of Crystal Growth, 305(2), 311, 2007 |
| 9 |
Phase selection of microcrystalline GaN synthesized in supercritical ammonia Hashimoto T, Fujito K, Sharma R, Letts ER, Fini PT, Speck JS, Nakamura S Journal of Crystal Growth, 291(1), 100, 2006 |
| 10 |
Growth of AlN by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates Fujito K, Hashimoto T, Samonji K, Speck JS, Nakamura S Journal of Crystal Growth, 272(1-4), 370, 2004 |