검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology Mohamad B, Leroux C, Rideau D, Haond M, Reimbold G, Ghibaudo G Solid-State Electronics, 128, 10, 2017 |
| 2 |
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models Pereira ASN, de Steel G, Planes N, Haond M, Giacomini R, Flandre D, Kilchytska V Solid-State Electronics, 128, 67, 2017 |
| 3 |
SOI 1T-DRAM cells with variable channel length and thickness: Experimental comparison of programming mechanisms Hubert A, Bawedin M, Guegan G, Ernst T, Faynot O, Cristoloveanu S Solid-State Electronics, 65-66, 256, 2011 |
| 4 |
Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs Rao R, Katti G, Havaldar DS, DasGupta N, DasGupta A Solid-State Electronics, 53(3), 256, 2009 |
| 5 |
Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack Rochette F, Casse M, Mouis M, Haziot A, Pioger T, Ghibaudo G, Boulanger F Solid-State Electronics, 53(3), 392, 2009 |
| 6 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F Solid-State Electronics, 53(4), 433, 2009 |
| 7 |
Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster Ishigaki T, Tsuchiya R, Morita Y, Yoshimoto H, Sugii N, Iwamatsu T, Oda H, Inoue Y, Ohtou T, Hiramoto T, Kimura S Solid-State Electronics, 53(7), 717, 2009 |
| 8 |
Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs Hubert A, Bawedin M, Cristoloveanu S, Ernst T Solid-State Electronics, 53(12), 1280, 2009 |
| 9 |
Analytical model for C-V characteristic of fully depleted SOI-MOS capacitors Afzal B, Zahabi A, Amirabadi A, Koolivand Y, Afzali-Kusha A, El Nokali M Solid-State Electronics, 49(8), 1262, 2005 |
| 10 |
A new memory effect (MSD) in fully depleted SOI MOSFETs Bawedin M, Cristoloveanu S, Yun JG, Flandre D Solid-State Electronics, 49(9), 1547, 2005 |