검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ Journal of Vacuum Science & Technology B, 26(1), 232, 2008 |
| 2 |
Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings Lucovsky G, Fulton CC, Zhang Y, Luning J, Edge L, Whitten JL, Nemanich RJ, Schlom DG, Afanase'v VV Thin Solid Films, 486(1-2), 129, 2005 |
| 3 |
X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H Journal of Vacuum Science & Technology B, 22(4), 2132, 2004 |
| 4 |
Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices Lucovsky G, Raynor GB, Zhang Y, Fulton CC, Nemanich RJ, Appel G, Ade H, Whitten JL Applied Surface Science, 212, 563, 2003 |
| 5 |
Electronic states at the interface of Ti-Si oxide on Si(100) Fulton CC, Lucovsky G, Nemanich RJ Journal of Vacuum Science & Technology B, 20(4), 1726, 2002 |