검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls Hartmann J, Steib F, Zhou H, Ledig J, Nicolai L, Fundling S, Schimpke T, Avramescu A, Varghese T, Trampert A, Strassburg M, Lugauer HJ, Wehmann HH, Waag A Journal of Crystal Growth, 476, 90, 2017 |
| 2 |
Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE Li SF, Wang X, Mohajerani MS, Fundling S, Erenburg M, Wei JD, Wehmann HH, Waag A, Mandl M, Bergbauer W, Strassburg M Journal of Crystal Growth, 364, 149, 2013 |
| 3 |
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties Bergbauer W, Strassburg M, Kolper C, Linder N, Roder C, Lahnemann J, Trampert A, Fundling S, Li SF, Wehmann HH, Waag A Journal of Crystal Growth, 315(1), 164, 2011 |