검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
GIDL analysis of the process variation effect in gate-all-around nanowire FET Kim S, Seo Y, Lee J, Kang M, Shin H Solid-State Electronics, 140, 59, 2018 |
| 2 |
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations Elmessary MA, Nagy D, Aldegunde M, Seoane N, Indalecio G, Lindberg J, Dettmer W, Peric D, Garcia-Loureiro AJ, Kalna K Solid-State Electronics, 128, 17, 2017 |
| 3 |
Replacement fin processing for III-V on Si: From FinFets to nanowires Waldron N, Merckling C, Teugels L, Ong P, Sebaai F, Barla K, Collaert N, Thean VY Solid-State Electronics, 115, 81, 2016 |
| 4 |
Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) Seo JH, Yoon YJ, Lee S, Lee JH, Cho S, Kang IM Current Applied Physics, 15(3), 208, 2015 |
| 5 |
A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners Moreno E, Villada MP, Ruiz FG, Roldan JB, Marin EG Solid-State Electronics, 111, 180, 2015 |
| 6 |
A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications Kumar M, Haldar S, Gupta M, Gupta RS Solid-State Electronics, 101, 13, 2014 |
| 7 |
Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors Lee JS, Seo JH, Cho S, Lee JH, Kang SW, Bae JH, Cho ES, Kang IM Current Applied Physics, 13(6), 1143, 2013 |
| 8 |
Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells Kim MS, Choi SJ, Moon DI, Duarte JP, Kim S, Choi YK Solid-State Electronics, 79, 7, 2013 |
| 9 |
Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs Ruiz FG, Tienda-Luna IM, Godoy A, Sampedro C, Gamiz F, Donetti L Solid-State Electronics, 59(1), 62, 2011 |
| 10 |
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Zhang LN, Ma CY, He J, Lin XN, Chan MS Solid-State Electronics, 54(8), 806, 2010 |