검색결과 : 101건
No. | Article |
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1 |
Self-assembly of alkanethiolates directs sulfur bonding with GaAs(100) Mancheno-Posso P, Muscat AJ Applied Surface Science, 397, 1, 2017 |
2 |
Electrochemical impedance spectroscopy investigations on the L-cysteine-thiolate self-assembled monolayers formed at p-GaAs(100) electrodes Lazarescu V, Enache M, Anastasescu M, Dobrescu G, Negrila C, Lazarescu MF Electrochimica Acta, 131, 42, 2014 |
3 |
Nanostructures on GaAs surfaces due to 60 keV Ar+-ion beam sputtering Venugopal V, Garg SK, Basu T, Sinha OP, Kanjilal D, Bhattacharyya SR, Som T Applied Surface Science, 258(9), 4144, 2012 |
4 |
Electronic effects at self-assembled 4,4'-thio-bis-benzenethiolate protected Au nanoparticles on p-GaAs (100) electrodes Enache M, Preda L, Negrila C, Lazarescu MF, Mercioniu I, Santos E, Anastasescu M, Dobrescu G, Lazarescu V Electrochimica Acta, 77, 8, 2012 |
5 |
Structure and magnetic properties of Fe epitaxial thin films prepared by UHV rf magnetron sputtering on GaAs single-crystal substrates Matsubara K, Ohtake M, Tobari K, Futamoto M Thin Solid Films, 519(23), 8299, 2011 |
6 |
Passivation effects of 4,4'-thio-bis-benzenethiolate adsorbed layers on semiconducting electrodes Lazarescu V, Scurtu R, Lazarescu MF, Toader AM, Volanschi E Electrochimica Acta, 55(27), 8293, 2010 |
7 |
Redox behavior of hemin at p-GaAs(100) electrode Toader AM, Volanschi E, Lazarescu MF, Lazarescu V Electrochimica Acta, 56(2), 863, 2010 |
8 |
Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source Sormunen J, Toivonen J, Sopanen M, Lipsanen H Applied Surface Science, 222(1-4), 286, 2004 |
9 |
Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(100) surfaces Lebedev MV, Ensling D, Hunger R, Mayer T, Jaegermann W Applied Surface Science, 229(1-4), 226, 2004 |
10 |
Theoretical study of the adsorption of a PTCDA monolayer on S-passivated GaAs(100) Szucs B, Hajnal Z, Scholz R, Sanna S, Frauenheim T Applied Surface Science, 234(1-4), 173, 2004 |