1 |
Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates Lu XM, Minami Y, Kitada T Journal of Crystal Growth, 512, 74, 2019 |
2 |
Design and fabrication of low power GaAs/AlAs resonant tunneling diodes Zawawi MAM, Missous M Solid-State Electronics, 138, 30, 2017 |
3 |
Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles Kang HL, Lao JB, Li ZP, Yao WQ, Liu C, Wang JY Applied Surface Science, 388, 584, 2016 |
4 |
Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap Lu XM, Matsubara S, Nakagawa Y, Kitada T, Isu T Journal of Crystal Growth, 425, 106, 2015 |
5 |
Piezoelectric photo-thermal study of GaAs single-quantum well embedded in GaAs/AlAs short-period superlattlices Wang P, Nakagawa T, Fukuyama A, Akashi Y, Fujiwara K, Kari T Renewable Energy, 33(2), 304, 2008 |
6 |
Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing Helmy AS, Martin P, Landesman JP, Bryce AC, Aitchison JS, Marsh JH Journal of Crystal Growth, 288(1), 53, 2006 |
7 |
Study of photomodulation dynamics of excitonic reflectivity in GaAs/AlAs quantum well heterostructures Kavaliauskas J, Cechavicius B, Krivaite G, Kadushkin VI, Shangina EL Materials Science Forum, 384-3, 83, 2002 |
8 |
Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching Rabah H, Alain S, Claude A Applied Surface Science, 171(1-2), 34, 2001 |
9 |
Electronic structure of ultrathin AlAs(100) layers buried in GaAs Mankefors S Applied Surface Science, 166(1-4), 313, 2000 |
10 |
Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques Pan JL, Fonstad CG, Matney K Journal of Crystal Growth, 219(4), 335, 2000 |