| 1 |
Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
Komninou P, Gladkov P, Karakostas T, Pangrac J, Pacherova O, Vanis J, Hulicius E
Journal of Crystal Growth, 396, 54, 2014 |
| 2 |
Structural, compositional, and optoelectronic properties of thin-film CdS on p-GaAs prepared by pulsed-laser deposition
Acharya KP, Mahalingm K, Ullrich B
Thin Solid Films, 518(7), 1784, 2010 |
| 3 |
Crystal structures and magnetic properties of MnAs grown by molecular-beam epitaxy on the (111)A facets of V-grooved GaAs substrates
Morishita Y, Sugawara Y, Itoh M, Sato K
Journal of Crystal Growth, 209(4), 599, 2000 |
| 4 |
Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states
Paki P, Leonelli R, Isnard L, Masut RA
Journal of Vacuum Science & Technology A, 18(3), 956, 2000 |
| 5 |
Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4
Hoke WE, Lyman PS, Whelan CS, Mosca JJ, Torabi A, Chang KL, Hsieh KC
Journal of Vacuum Science & Technology B, 18(3), 1638, 2000 |
| 6 |
Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions
Hudait MK, Krupanidhi SB
Journal of Vacuum Science & Technology B, 17(3), 1003, 1999 |
| 7 |
In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si1-xGex on Si(001)
Hiroyama Y, Tamura M
Thin Solid Films, 334(1-2), 1, 1998 |
| 8 |
Observation of Hot-Electron Relaxation in GaAs/AlGaAs Multiple-Quantum Wells by Excitation Spectroscopy
Wu HZ, Liu JH, Dong GO, Wu JZ, Ye ZZ, Jiang XB
Journal of Vacuum Science & Technology B, 15(4), 849, 1997 |
| 9 |
Subnanometer Analysis of Molecular-Beam Epitaxy-Grown Ternary Arsenides
Seaford ML, Wu W, Eyink KG, Tomich DH, Tucker JR, Eastman LF
Journal of Vacuum Science & Technology B, 15(4), 1274, 1997 |
| 10 |
Reaction-Kinetics of Photoactive Defects in Semiconductor Dissolution
Robertson EA, Fogler HS
AIChE Journal, 42(8), 2279, 1996 |
