검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
In situ monitoring of GaN substrate surface in ICP containing energetic electrons Huang XJ, Guo Y, Zhang J, Nakano Y, Sugai H, Nakamura K Applied Surface Science, 292, 387, 2014 |
| 2 |
Effects of hydrogen treatment on ohmic contacts to p-type GaN films Huang BR, Chou CH, Ke WC, Chou YL, Tsai CL, Wu MC Applied Surface Science, 257(17), 7490, 2011 |
| 3 |
Activation of Mg-doped P-GaN by using two-step annealing Hwang JD, Yang GH Applied Surface Science, 253(10), 4694, 2007 |
| 4 |
'Pop-in' phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates Navamathavan R, Moon YT, Kim GS, Lee TG, Hahn JH, Park SJ Materials Chemistry and Physics, 99(2-3), 410, 2006 |
| 5 |
Peculiarities of the electron field emission from quantum-size structures Litovchenko VG, Evtukh AA, Litvin YM, Goncharuk NM, Hartnagel H, Yilmazoglu O, Pavlidis D Applied Surface Science, 215(1-4), 160, 2003 |
| 6 |
Comparison of GaN epitaxial films on silicon nitride buffer and Si(111) Huang JY, Ye ZZ, Wang L, Yuan J, Zhao BH, Lu HM Solid-State Electronics, 46(8), 1231, 2002 |
| 7 |
Growth of Gallium Nitride Thin-Films by Liquid-Target Pulsed-Laser Deposition Xiao RF, Sun XW, Li ZF, Cue N, Kwok HS, Liu QZ, Lau SS Journal of Vacuum Science & Technology A, 15(4), 2207, 1997 |