검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Effects of growth temperature modulated by HCl flow rate on the surface and crystal qualities of thick GaN by HVPE Zhao LB, Wu JJ, Xu K, Yang ZJ, Zhang GY Applied Surface Science, 255(18), 8003, 2009 |
| 2 |
Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route Adekore BT, Callahan MJ, Bouthillette L, Dalmau R, Sitar Z Journal of Crystal Growth, 308(1), 71, 2007 |
| 3 |
Control of the 2D/3D transition of cubic GaN/AlN nanostructures on 3C-SiC epilayers Founta S, Gogneau N, Martinez-Guerrero E, Ferro G, Monteil Y, Daudin B, Mariette H Materials Science Forum, 457-460, 1561, 2004 |
| 4 |
In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr Cao B, Xu K, Ishitani Y, Yoshikawa A Thin Solid Films, 455-56, 661, 2004 |
| 5 |
Ill-V surface plasma nitridation: A challenge for III-V nitride epigrowth Losurdo M, Capezzuto P, Bruno G, Leo G, Irene EA Journal of Vacuum Science & Technology A, 17(4), 2194, 1999 |
| 6 |
Selective wet etching of lithium gallate Kropewnicki TJ, Doolittle WA, Carter-Coman C, Kang S, Kohl PA, Jokerst NM, Brown AS Journal of the Electrochemical Society, 145(5), L88, 1998 |
| 7 |
Sputter deposition of gallium nitride films using a GaAs target Elkashef N, Srinivasa RS, Major S, Sabharwal SC, Muthe KP Thin Solid Films, 333(1-2), 9, 1998 |
| 8 |
Nitridation of the GaAs(001) Surface Using Atomic Nitrogen Hill P, Westwood DI, Haworth L, Lu J, Macdonald JE Journal of Vacuum Science & Technology B, 15(4), 1133, 1997 |
| 9 |
Wet and Dry-Etching of LiGaO2 and LiAlO2 Lee JW, Pearton SJ, Abernathy CR, Zavada JM, Chai BL Journal of the Electrochemical Society, 143(8), L169, 1996 |
| 10 |
Wet Chemical Etching of AlN and Inaln in KOH Solutions Vartuli CB, Pearton SJ, Lee JW, Abernathy CR, Mackenzie JD, Zolper JC, Shul RJ, Ren F Journal of the Electrochemical Society, 143(11), 3681, 1996 |