| 1 |
Atomic structures of Ag/Ge(111) root 39x root 39 and 6x6 surfaces studied by STM: observations of bias dependent reconstruction transformations
Zhang HM, Uhrberg RIG
Applied Surface Science, 212, 353, 2003 |
| 2 |
Surface electronic structure of the root 3x root 3, root 39x root 39 and 6x6 surfaces of Ag/Ge(111): observation of a metal to semiconductor transition
Zhang HM, Balasubramanian T, Uhrberg RIG
Applied Surface Science, 175, 237, 2001 |
| 3 |
Use of reactive ion sputtering to produce clean germanium surfaces in a carbon rich environment - an ion scattering study
Smentkowski VS, Holecek JC, Schultz JA, Krauss AR, Gruen DM
Journal of Vacuum Science & Technology A, 16(3), 1779, 1998 |
| 4 |
Scanning-Tunneling-Microscopy (STM) Studies of the Chemical-Vapor-Deposition of Ge on Si(111) from Ge Hydrides and a Comparison with Molecular-Beam Epitaxy
Wintterlin J, Avouris P
Journal of Chemical Physics, 100(1), 687, 1994 |
| 5 |
The Analysis of the Chemisorption Bond from Uncorrelated and Correlated Cluster Model Wave-Functions
Ricart JM, Clotet A, Illas F, Rubio J
Journal of Chemical Physics, 100(3), 1988, 1994 |
| 6 |
Pb Preadsorption Facilitates Island Formation During Ga Growth on Si(111)
Hibino H, Shimizu N, Sumitomo K, Shinoda Y, Nishioka T, Ogino T
Journal of Vacuum Science & Technology A, 12(1), 23, 1994 |
