검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6 Kil YH, Yuk SH, Kim JH, Kim TS, Kim YT, Choi CJ, Shim KH Solid-State Electronics, 124, 35, 2016 |
| 2 |
Ge(001): B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics Kim H, Greene JE Journal of Vacuum Science & Technology A, 17(2), 354, 1999 |