검색결과 : 4건
No. | Article |
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1 |
Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon Cammilleri D, Fossard F, Debarre D, Manh CT, Dubois C, Bustarret E, Marcenat C, Achatz P, Bouchier D, Boulmer J Thin Solid Films, 517(1), 75, 2008 |
2 |
Laser doping for microelectronics and microtechnology Sarnet T, Kerrien G, Yaakoubi N, Bosseboeuf A, Dufour-Gergam E, Debarre D, Boulmer J, Kakushima K, Laviron C, Hernandez M, Venturini J, Bourouina T Applied Surface Science, 247(1-4), 537, 2005 |
3 |
Optical characterization of laser processed ultra-shallow junctions Kerrien G, Hernandez M, Laviron C, Sarnet T, Debarre D, Noguchi T, Zahorski D, Venturini J, Semeria MN, Boulmer J Applied Surface Science, 208, 277, 2003 |
4 |
Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping Kerrien G, Boulmer J, Debarre D, Bouchier D, Grouillet A, Lenoble D Applied Surface Science, 186(1-4), 45, 2002 |