화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon
Cammilleri D, Fossard F, Debarre D, Manh CT, Dubois C, Bustarret E, Marcenat C, Achatz P, Bouchier D, Boulmer J
Thin Solid Films, 517(1), 75, 2008
2 Laser doping for microelectronics and microtechnology
Sarnet T, Kerrien G, Yaakoubi N, Bosseboeuf A, Dufour-Gergam E, Debarre D, Boulmer J, Kakushima K, Laviron C, Hernandez M, Venturini J, Bourouina T
Applied Surface Science, 247(1-4), 537, 2005
3 Optical characterization of laser processed ultra-shallow junctions
Kerrien G, Hernandez M, Laviron C, Sarnet T, Debarre D, Noguchi T, Zahorski D, Venturini J, Semeria MN, Boulmer J
Applied Surface Science, 208, 277, 2003
4 Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping
Kerrien G, Boulmer J, Debarre D, Bouchier D, Grouillet A, Lenoble D
Applied Surface Science, 186(1-4), 45, 2002