검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator Sawano K, Hoshi Y, Kubo S, Arimoto K, Yamanaka J, Nakagawa K, Hamaya K, Miyao M, Shiraki Y Thin Solid Films, 613, 24, 2016 |
| 2 |
Order and temperature dependence of surface blistering in H and He co-implanted Ge Dai JY, Wei X, Xue ZY, Di ZF, Zhang M Thin Solid Films, 557, 115, 2014 |
| 3 |
Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth Ohta Y, Tanaka T, Toko K, Sadoh T, Miyao M Solid-State Electronics, 60(1), 18, 2011 |
| 4 |
Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds Sakane T, Toko K, Tanaka T, Sadoh T, Miyao M Solid-State Electronics, 60(1), 22, 2011 |
| 5 |
Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth Moriyama Y, Hirashita N, Usuda K, Nakaharai S, Sugiyama N, Toyoda E, Takagi S Applied Surface Science, 256(3), 823, 2009 |
| 6 |
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S Thin Solid Films, 517(1), 167, 2008 |
| 7 |
높은 열처리 온도를 갖는 GOI 웨이퍼의 직접접합 변영태, 김선호 Korean Journal of Materials Research, 16(10), 652, 2006 |
| 8 |
Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure Gao F, Lee SJ, Balakumar S, Du AY, Foo YL, Kwong DL Thin Solid Films, 504(1-2), 69, 2006 |
| 9 |
Electronic transport properties of thin, channel regions from SOI through GOI: A first-principles study Yamauchi J Thin Solid Films, 508(1-2), 342, 2006 |
| 10 |
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Taraschi G, Pitera AJ, Fitzgerald EA Solid-State Electronics, 48(8), 1297, 2004 |