검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Growth of high Ge content SiGe on (110) oriented Si wafers Hikavyy A, Vanherle W, Vincent B, Dekoster J, Bender H, Moussa A, Witters L, Hoffman T, Loo R Thin Solid Films, 520(8), 3179, 2012 |
| 2 |
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T Solid-State Electronics, 60(1), 89, 2011 |
| 3 |
Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET Tachi K, Vulliet N, Barraud S, Kakushima K, Iwai H, Cristoloveanu S, Ernst T Solid-State Electronics, 65-66, 16, 2011 |
| 4 |
Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys Bauer M, Thomas SG Thin Solid Films, 518, S200, 2010 |
| 5 |
Pulsed selective epitaxial growth of hexagonal GaN microprisms Kim S, Schroeder JL, Sands TD Journal of Crystal Growth, 310(6), 1107, 2008 |
| 6 |
Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S Solid-State Electronics, 50(4), 587, 2006 |
| 7 |
Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(001) surfaces Nguyen LH, LeThanh V, Debarre D, Yam V, Halbwax M, El Kurdi M, Bouchier D, Rosner P, Becker M, Benamara M, Strunk HP Applied Surface Science, 224(1-4), 134, 2004 |
| 8 |
Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas Jin G, Liu JL, Luo YH, Wang KL Thin Solid Films, 380(1-2), 169, 2000 |
| 9 |
Multiple layers of silicon-on-insulator for nanostructure devices Neudeck GW, Pae SW, Denton JP, Su T Journal of Vacuum Science & Technology B, 17(3), 994, 1999 |
| 10 |
Ammonia Nitridation of Thermal Polyoxide to Eliminate Epitaxial Ambient Induced Dielectric Pinhole Formation Fultz WW, Neudeck GW Journal of Vacuum Science & Technology B, 14(6), 3465, 1996 |