화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The benefits and current progress of SiC SGTOs for pulsed power applications
Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V
Solid-State Electronics, 54(10), 1232, 2010
2 Opportunities and technical strategies for silicon carbide device development
Cooper JA
Materials Science Forum, 389-3, 15, 2002
3 Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors
Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL
Materials Science Forum, 389-3, 1349, 2002
4 Dipole-Moments, Polarizabilities, and Infrared Intensities Calculated with Electric-Field Dependent Functions
Darling CL, Schlegel HB
Journal of Physical Chemistry, 98(23), 5855, 1994