검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications Alim MA, Rezazadeh AA, Gaquiere C Solid-State Electronics, 119, 11, 2016 |
| 2 |
A link between noise parameters and light exposure in GaAs pHEMT's Caddemi A, Crupi G, Salvo G Solid-State Electronics, 105, 16, 2015 |
| 3 |
A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation Khandelwal S, Goyal N, Fjeldly TA Solid-State Electronics, 79, 22, 2013 |
| 4 |
A charge-based capacitance model for AlGaAs/GaAs HEMTs Khandelwal S, Yigletu FM, Iniguez B, Fjeldly TA Solid-State Electronics, 82, 38, 2013 |
| 5 |
Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs Okayama T, Rao MV Solid-State Electronics, 54(3), 294, 2010 |