검색결과 : 10건
No. | Article |
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1 |
Investigating the effect of silicon thickness on ultra-thin silicon on insulator as a compliant substrate for gallium arsenide heteroepitaxial growth Noh S, Hao XJ, Liu ZH, Green MA, Lee S, Ho-Baillie A Thin Solid Films, 653, 371, 2018 |
2 |
The GaAs/GaAs/Si solar cell - Towards current matching in an integrated two terminal tandem Ren ZK, Liu HH, Liu Z, Tan CS, Aberle AG, Buonassisi T, Peters IM Solar Energy Materials and Solar Cells, 160, 94, 2017 |
3 |
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100) Mukhopadhyay P, Kumar R, Ghosh S, Chakraborty A, Bag A, Kabi S, Banerji P, Biswas D Journal of Crystal Growth, 418, 138, 2015 |
4 |
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding Kim S, Geum DM, Park MS, Kim CZ, Choi WJ Solar Energy Materials and Solar Cells, 141, 372, 2015 |
5 |
Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2 Renard C, Cherkashin N, Jaffre A, Moliere T, Hallais G, Vincent L, Alvarez J, Mencaraglia D, Michel A, Bouchier D Journal of Crystal Growth, 401, 554, 2014 |
6 |
Epitaxial lift-off process for GaAs solar cell on Si substrate Taguchi H, Soga T, Jimbo T Solar Energy Materials and Solar Cells, 85(1), 85, 2005 |
7 |
High-quality thin film GaAs bonded to Si using SeS2 - A new approach for high-efficiency tandem solar cells Arokiaraj J, Okui H, Taguchi H, Soga T, Jimbo T, Umeno M Solar Energy Materials and Solar Cells, 66(1-4), 607, 2001 |
8 |
Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H-2 plasma Wang G, Ogawa T, Soga T, Egawa T, Jimbo T, Umeno M Applied Surface Science, 159, 191, 2000 |
9 |
Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVD Wang G, Ogawa T, Soga T, Jimbo T, Umeno M Journal of Crystal Growth, 221, 172, 2000 |
10 |
Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth Soga T, Arokiaraj J, Taguchi H, Jimbo T, Umeno M Journal of Crystal Growth, 221, 220, 2000 |