1 |
A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application Li Y, Wang C, Kim NY Solid-State Electronics, 103, 147, 2015 |
2 |
Electrical, optical and structural properties of Al-doped ZnO thin films grown on GaAs(111)B substrates by pulsed laser deposition Weigand C, Crisp R, Ladam C, Furtak T, Collins R, Grepstad J, Weman H Thin Solid Films, 545, 124, 2013 |
3 |
Effect of GaAs substrate misorientation on InxGa1-xAs crystalline quality and photovoltaic performance Tseng MC, Horng RH, Wuu DS, Tsai YL, Kuo CH, Lin SN, Yu HH Thin Solid Films, 518(24), 7213, 2010 |
4 |
Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy Sfaxi L, Bouzaiene L, Sghaier H, Maaref H Journal of Crystal Growth, 293(2), 330, 2006 |
5 |
Zn3N2 compensated ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy Sakakibara S, Inoue Y, Mimura H, Ishino K, Ishida A, Fujiyasu H Applied Surface Science, 244(1-4), 343, 2005 |
6 |
Epitaxial growth of Ni films by radio frequency sputtering on GaAs(001) with a TiN buffer Makihara K, Barna A, Hashimoto M, Shi J, Maruyama S Thin Solid Films, 485(1-2), 235, 2005 |
7 |
Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers Chichibu SF, Sugiyama M, Nozaka T, Suzuki T, Onuma T, Nakajima K, Aoyama T, Sumiya M, Chikyow T, Uedono A Journal of Crystal Growth, 272(1-4), 481, 2004 |
8 |
Growth of InN films on (111)GaAs substrates by reactive magnetron sputtering Guo QX, Murata K, Nishio M, Ogawa H Applied Surface Science, 169, 340, 2001 |
9 |
Effect of the substrate pretreatment on the epitaxial growth of indium nitride Guo QX, Okada A, Nishio M, Ogawa H Applied Surface Science, 169, 345, 2001 |
10 |
Structural characterization of TiO2 thin films prepared by pulsed laser deposition on GaAs(100) substrates Liu XH, Yin J, Liu ZG, Yin XB, Chen GX, Wang M Applied Surface Science, 174(1), 35, 2001 |