화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application
Li Y, Wang C, Kim NY
Solid-State Electronics, 103, 147, 2015
2 Electrical, optical and structural properties of Al-doped ZnO thin films grown on GaAs(111)B substrates by pulsed laser deposition
Weigand C, Crisp R, Ladam C, Furtak T, Collins R, Grepstad J, Weman H
Thin Solid Films, 545, 124, 2013
3 Effect of GaAs substrate misorientation on InxGa1-xAs crystalline quality and photovoltaic performance
Tseng MC, Horng RH, Wuu DS, Tsai YL, Kuo CH, Lin SN, Yu HH
Thin Solid Films, 518(24), 7213, 2010
4 Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy
Sfaxi L, Bouzaiene L, Sghaier H, Maaref H
Journal of Crystal Growth, 293(2), 330, 2006
5 Zn3N2 compensated ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy
Sakakibara S, Inoue Y, Mimura H, Ishino K, Ishida A, Fujiyasu H
Applied Surface Science, 244(1-4), 343, 2005
6 Epitaxial growth of Ni films by radio frequency sputtering on GaAs(001) with a TiN buffer
Makihara K, Barna A, Hashimoto M, Shi J, Maruyama S
Thin Solid Films, 485(1-2), 235, 2005
7 Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
Chichibu SF, Sugiyama M, Nozaka T, Suzuki T, Onuma T, Nakajima K, Aoyama T, Sumiya M, Chikyow T, Uedono A
Journal of Crystal Growth, 272(1-4), 481, 2004
8 Growth of InN films on (111)GaAs substrates by reactive magnetron sputtering
Guo QX, Murata K, Nishio M, Ogawa H
Applied Surface Science, 169, 340, 2001
9 Effect of the substrate pretreatment on the epitaxial growth of indium nitride
Guo QX, Okada A, Nishio M, Ogawa H
Applied Surface Science, 169, 345, 2001
10 Structural characterization of TiO2 thin films prepared by pulsed laser deposition on GaAs(100) substrates
Liu XH, Yin J, Liu ZG, Yin XB, Chen GX, Wang M
Applied Surface Science, 174(1), 35, 2001