| 1 |
Broadband and omnidirectional highly-transparent coverglasses coated with biomimetic moth-eye nanopatterned polymer films for solar photovoltaic system applications
Leem JW, Guan XY, Choi M, Yu JS
Solar Energy Materials and Solar Cells, 134, 45, 2015 |
| 2 |
1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge
Fetzer CM, Yoon H, King RR, Law DC, Isshiki TD, Karam NH
Journal of Crystal Growth, 276(1-2), 48, 2005 |
| 3 |
Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy
Ohta M, Miyamoto T, Kageyama T, Matsuura T, Matsui Y, Furuhata T, Koyama F
Journal of Crystal Growth, 278(1-4), 521, 2005 |
| 4 |
High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE
Fetzer CM, King RR, Colter PC, Edmondson KM, Law DC, Stavrides AP, Yoon H, Ermer JH, Romero MJ, Karam NH
Journal of Crystal Growth, 261(2-3), 341, 2004 |
| 5 |
High-performance AlInAs/GaInAs delta-doped HEMT with negative differential resistance switch for logic application
Tsai JH
Solid-State Electronics, 48(1), 81, 2004 |
| 6 |
Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Fujiwara Y, Nonogaki Y, Oga R, Koizumi A, Takeda Y
Applied Surface Science, 216(1-4), 564, 2003 |
| 7 |
High growth enhancement factor in arrayed waveguide by MOVPE selective area growth
Moriguchi Y, Kihara T, Shimomura K
Journal of Crystal Growth, 248, 395, 2003 |
| 8 |
Characterisation of a 300 x photovoltaic concentrator system with one-axis tracking
Hein M, Dimroth F, Siefer G, Bett AW
Solar Energy Materials and Solar Cells, 75(1-2), 277, 2003 |
| 9 |
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors
Moto A, Tanaka S, Tanabe T, Takagishi S
Solar Energy Materials and Solar Cells, 66(1-4), 585, 2001 |
| 10 |
Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection
Kahn M, Lasri J, Orenstein M, Ritter D, Eisenstein G
Solid-State Electronics, 45(10), 1827, 2001 |
