화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 InGaAsN/GaAs QD and QW structures grown by MOVPE
Daniltsev VM, Drozdov MN, Drozdov YN, Gaponova DM, Khrykin OI, Murel AV, Shashkin VI, Vostokov NV
Journal of Crystal Growth, 248, 343, 2003
2 Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 mu m laser emission
Gouardes E, Alexandre F, Gauthier-Lafaye O, Vuong-Becaert A, Colson V, Thedrez B
Journal of Crystal Growth, 248, 446, 2003
3 Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates
Hashimoto A, Kitano T, Nguyen AK, Masuda A, Yamamoto A, Tanaka S, Takahashi M, Moto A, Tanabe T, Takagishi S
Solar Energy Materials and Solar Cells, 75(1-2), 313, 2003