| 1 |
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates
Pan L, Dong X, Li ZH, Luo WK, Ni JY
Applied Surface Science, 447, 512, 2018 |
| 2 |
Strong Room Temperature 505 nm Emission from Hexagonal Crack Free InGaN Thin Film on Si(111) Grown by MBE
Chuah LS, Hassan Z, Chin CW, Mourad MH, Yam FK, Ng SS
Composite Interfaces, 18(1), 37, 2011 |
| 3 |
N-type doping of GaN/Si(111) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice
Kim DW, Lee CR
Journal of Crystal Growth, 286(2), 235, 2006 |
| 4 |
High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD
Jang SH, Lee CR
Journal of Crystal Growth, 253(1-4), 64, 2003 |
| 5 |
The influence of AlxGa1-xN intermediate buffer layer on the characteristics of GaN/Si(111) epitaxy
Jang SH, Lee SS, Lee OY, Lee CR
Journal of Crystal Growth, 255(3-4), 220, 2003 |
| 6 |
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)
Lahreche H, Vennegues P, Tottereau O, Laugt M, Lorenzini P, Leroux M, Beaumont B, Gibart P
Journal of Crystal Growth, 217(1-2), 13, 2000 |
| 7 |
Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer
Strittmatter A, Bimberg D, Krost A, Blasing J, Veit P
Journal of Crystal Growth, 221, 293, 2000 |
