화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Effects of growth pressure on the properties of p-GaN layers
Xian YL, Huang SJ, Zheng ZY, Fan BF, Wu ZS, Jiang H, Wang G
Journal of Crystal Growth, 325(1), 32, 2011
2 Periodic Mg distribution in GaN:delta-Mg and the effect of annealing on structural and optical properties
Wegscheider M, Simbrunner C, Li T, Jakiela R, Navarro-Quezada A, Quast M, Sitter H, Bonanni A
Applied Surface Science, 255(3), 731, 2008
3 Magnesium diffusion profile in GaN grown by MOVPE
Benzarti Z, Halidou I, Bougrioua Z, Boufaden T, El Jani B
Journal of Crystal Growth, 310(14), 3274, 2008
4 The self-assemble GaN : Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching process
Lin CF, Yang ZJ, Dai JJ, Zheng JH, Chang SY
Thin Solid Films, 515(10), 4492, 2007
5 A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy
Gao CX, Yu FC, Choi AR, Kim DJ, Kim CG, Kim CS, Kim HJ, Ihm YE
Journal of Crystal Growth, 291(1), 60, 2006
6 AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
Chen WS, Chang SJ, Su YK, Wang RL, Kuo CH, Shei SC
Journal of Crystal Growth, 275(3-4), 398, 2005
7 Strain property studies of GaN : Mg films grown by MOCVD
Feng Q, Yue H
Materials Science Forum, 475-479, 1697, 2005
8 Catalytic Effect of Metal Elements on the Growth of GaN and Mg-doped GaN Micro-Crystals
Nahm KS, Kim TY, Lee SH
Korean Journal of Chemical Engineering, 20(4), 653, 2003
9 Low-temperature activation of mg-doped GaN with thin Co and Pt films
Waki I, Fujioka H, Oshima M, Miki H, Okuyama M
Applied Surface Science, 190(1-4), 339, 2002
10 Porous SiC: New applications through in- and out- dopant diffusion
Mynbaeva M, Kuznetsov N, Lavrent'ev A, Mynbaev K, Wolan JT, Grayson B, Ivantsov V, Syrkin A, Fomin A, Saddow SE
Materials Science Forum, 433-4, 657, 2002