검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates Pan L, Dong X, Li ZH, Luo WK, Ni JY Applied Surface Science, 447, 512, 2018 |
| 2 |
GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off Mu FW, Morino Y, Jerchel K, Fujino M, Suga T Applied Surface Science, 416, 1007, 2017 |
| 3 |
Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Lee HJ, Bae SY, Lekhal K, Mitsunari T, Tamura A, Honda Y, Amano H Journal of Crystal Growth, 454, 114, 2016 |
| 4 |
Growth of GaN films on circle array patterned Si (111) substrates Lin KL, Tran BT, Chung CC, Chang EY Journal of Crystal Growth, 401, 648, 2014 |
| 5 |
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors Mosbahi H, Gassoumi M, Saidi I, Mejri H, Gaquiere C, Zaidi MA, Maaref H Current Applied Physics, 13(7), 1359, 2013 |
| 6 |
Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells Saron KMA, Hashim MR, Naderi N, Allam NK Solar Energy, 98, 485, 2013 |
| 7 |
Nitride-based concentrator solar cells grown on Si substrates Liu CY, Lai CC, Liao JH, Cheng LC, Liu HH, Chang CC, Lee GY, Chyi JI, Yeh LK, He JH, Chung TY, Huang LC, Lai KY Solar Energy Materials and Solar Cells, 117, 54, 2013 |
| 8 |
Two step growth of high quality long n-GaN:Si nanowires using mu-GaN seed on Si(111) by metalorganic chemical vapor deposition Kim MH, Park JH, Yoo HI, Kissinger S, Kim JS, Baek BJ, Lee CR Thin Solid Films, 548, 58, 2013 |
| 9 |
Strong Room Temperature 505 nm Emission from Hexagonal Crack Free InGaN Thin Film on Si(111) Grown by MBE Chuah LS, Hassan Z, Chin CW, Mourad MH, Yam FK, Ng SS Composite Interfaces, 18(1), 37, 2011 |
| 10 |
Thermal effects in AlGaN/GaN/Si high electron mobility transistors Saidi I, Cordier Y, Chmielowska M, Mejri H, Maaref H Solid-State Electronics, 61(1), 1, 2011 |