검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy Liu NL, Wang Q, Zheng XP, Li SF, Dikme Y, Xiong H, Pang YZ, Zhang GY Journal of Crystal Growth, 500, 85, 2018 |
| 2 |
Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers Lee KH, Chang PC, Chang SJ, Su YK, Wang YC, Yu CL, Kuo CH Thin Solid Films, 518(10), 2839, 2010 |
| 3 |
GaN nucleation on (0001)-sapphire via ion-induced nitridation of gallium Sidorenko A, Peisert H, Neumann H, Chasse T Applied Surface Science, 252(21), 7671, 2006 |