검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer Wierzbicka A, Tchutchulashvili G, Sobanska M, Klosek K, Minikayev R, Domagala JZ, Borysiuk J, Zytkiewicz ZR Applied Surface Science, 425, 1014, 2017 |
| 2 |
Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150 mm diameter Si (111) substrate Liu HF, Seng HL, Teng JH, Chua SJ, Chi DZ Journal of Crystal Growth, 402, 155, 2014 |
| 3 |
Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses Ryu HY, Jeon KS, Sung JH, Lee MW, Lee E, Song H, Kang MG, Choi Y, Lee JS Current Applied Physics, 13(8), 1600, 2013 |
| 4 |
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy Manuel JM, Morales FM, Garcia R, Aidam R, Kirste L, Ambacher O Journal of Crystal Growth, 357, 35, 2012 |
| 5 |
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy Dogan P, Brandt O, Pfuller C, Bluhm AK, Geelhaar L, Riechert H Journal of Crystal Growth, 323(1), 418, 2011 |
| 6 |
Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates Niiyama Y, Li ZD, Chow TP, Li JA, Nomura T, Kato S Solid-State Electronics, 56(1), 73, 2011 |
| 7 |
Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs Xiao DP, Schreurs D, De Raedt W, Derluyn J, Germain M, Nauwelaers B, Borghs G Solid-State Electronics, 53(2), 185, 2009 |
| 8 |
MOVPE growth of GaN on Si - Substrates and strain Dadgar A, Veit P, Schulze F, Blasing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A Thin Solid Films, 515(10), 4356, 2007 |
| 9 |
Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask Naoi H, Narukawa M, Miyake H, Hiramatsu K Journal of Crystal Growth, 248, 573, 2003 |
| 10 |
The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD Zamir S, Meyler B, Zolotoyabko E, Salzman J Journal of Crystal Growth, 218(2-4), 181, 2000 |