검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Estimation of bowing in hetero-epitaxial GaN-on-sapphire substrate at elevated temperatures by X-ray diffraction rocking curve measurement Aida H, Kim SW, Suzuki T Journal of Crystal Growth, 412, 60, 2015 |
| 2 |
Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives Aida H, Takeda H, Kim SW, Aota N, Koyama K, Yamazaki T, Doi T Applied Surface Science, 292, 531, 2014 |
| 3 |
Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities Jeon DW, Lee SJ, Jeong T, Baek JH, Park JW, Jang LW, Kim M, Lee IH, Ju JW Journal of Crystal Growth, 338(1), 134, 2012 |
| 4 |
나노 구조의 패턴을 갖는 n-type GaN 기판을 이용한 380 nm UV-LED의 광 추출 효율 개선 백광선, 조민성, 이영곤, Karthikeyan Giri Sadasivam, 송영호, 김승환, 김재관, 전성란, 이준기 Korean Journal of Materials Research, 21(5), 273, 2011 |
| 5 |
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching Chen KM, Yeh YH, Wu YH, Chiang CH, Yang DR, Chao CL, Chi TW, Fang YH, Tsay JD, Lee WI Journal of Crystal Growth, 312(24), 3574, 2010 |
| 6 |
Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy Xu K, Deng PZ, Xu J, Zhou GQ, Liu WJ, Tian YL Journal of Crystal Growth, 216(1-4), 343, 2000 |