화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
Lu J, Wang Y, Ma L, Yu ZP
Solid-State Electronics, 52(1), 115, 2008
2 Schottky barrier height in GaN/AlGaN heterostructures
Anwar AFM, Faraclas EW
Solid-State Electronics, 50(6), 1041, 2006
3 AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics
Faraclas EW, Anwar AFM
Solid-State Electronics, 50(6), 1051, 2006
4 Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes
Kuzmik J, Pogany D, Gornik E, Javorka P, Kordos P
Solid-State Electronics, 48(2), 271, 2004
5 The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS
Luo B, Mehandru RM, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch RC, Gillespie J, Dellmer R, Jenkins T, Sewell J, Via D, Crespo A
Solid-State Electronics, 46(12), 2185, 2002