검색결과 : 12건
No. | Article |
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1 |
GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy Jasik A, Sankowska I, Wawro A, Ratajczak J, Smoczynski D, Czuba K Current Applied Physics, 19(4), 542, 2019 |
2 |
Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE Jasik A, Sankowska I, Ratajczak J, Wawro A, Smoczynski D, Czuba K, Wzorek M Current Applied Physics, 19(2), 120, 2019 |
3 |
Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells Chevuntulak C, Rakpaises T, Sridumrongsak N, Thainoi S, Kiravittaya S, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Tandaechanurat A, Panyakeow S Journal of Crystal Growth, 512, 159, 2019 |
4 |
Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure Montesdeoca D, Carrington PJ, Marko IP, Wagener MC, Sweeney SJ, Krier A Solar Energy Materials and Solar Cells, 187, 227, 2018 |
5 |
Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis Boustanji H, Jaziri S, Lazzari JL Solar Energy Materials and Solar Cells, 159, 633, 2017 |
6 |
Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons Kechiantz A, Afanasev A, Lazzari JL Solar Energy Materials and Solar Cells, 144, 767, 2016 |
7 |
Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots Jiang C, Kawazu T, Kobayashi S, Sakaki H Journal of Crystal Growth, 301, 828, 2007 |
8 |
Atomically-controlled GaSb-termination of GaAs surface and its properties Miura T, Nakai T, Yamaguchi K Applied Surface Science, 237(1-4), 242, 2004 |
9 |
Characterization of InP and GaAs films by contactless transient photoconductivity measurements Kunst M, Neitzert HC, Sanders A Thin Solid Films, 450(1), 159, 2004 |
10 |
Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE Touskova J, Kindl D, Samochin E, Tousek J, Hulicius E, Pangrac J, Simecek T, Vyborny Z Solar Energy Materials and Solar Cells, 76(2), 135, 2003 |