검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Novel AlInN/GaN integrated circuits operating up to 500 degrees C Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M Solid-State Electronics, 113, 22, 2015 |
| 2 |
Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions Deng YQ, Islam MDM, Gaevski M, Yang ZJ, Adivarahan V, Khan A Solid-State Electronics, 52(7), 1106, 2008 |
| 3 |
Technique to automatically measure electron-beam diameter and astigmatism: BEAMETR Babin S, Gaevski M, Joy D, Machin M, Martynov A Journal of Vacuum Science & Technology B, 24(6), 2956, 2006 |