1 |
PbTe films grown by hot wall epitaxy on sapphire substrates Dashevsky Z, Belenchuk A, Gartstein E, Shapoval O Thin Solid Films, 461(2), 256, 2004 |
2 |
On the island nucleation process in LPOMVPE In0.2Ga0.8As/GaAs multilayers grown on GaAs and AlAs buffers Gartstein E, Mogilyanski D, Golan R, Fekete D Thin Solid Films, 424(1), 15, 2003 |
3 |
Characterization of the islands nucleation in LPOMVPE grown In0.2Ga0.8As/GaAs multilayer in the near substrate/buffer interfacial regions Mogilyanski D, Gartstein E Journal of Crystal Growth, 234(4), 646, 2002 |
4 |
Characterization of the interface strain/stress state in Si-on-sapphire heterostructure Mogilyanski D, Gartstein E, Metzger H Materials Science Forum, 347-3, 568, 2000 |
5 |
Structural aspects of the interface in silicon-on-sapphire system Gartstein E, Lach S, Mogilyanski D Thin Solid Films, 319(1-2), 182, 1998 |
6 |
The Effect of Heat-Treatment on the Microfibrillar Network of Poly(P-Phenylene Benzobisthiazole) Cohen Y, Gartstein E, Arndt KF, Ruland W Polymer Engineering and Science, 36(10), 1355, 1996 |