| 1 |
High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation
Kang MS, Cho WJ
Current Applied Physics, 18(9), 1080, 2018 |
| 2 |
High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation
Kang MS, Cho WJ
Current Applied Physics, 18(9), 1080, 2018 |
| 3 |
Fabrication of flexible organic thin-film transistors based on negative acting photosensitive novolak polymer as an organic gate insulator
Xie YT, Wang DP, Cui W, Wang L, Guan C, Chen GP, He F
Molecular Crystals and Liquid Crystals, 664(1), 135, 2018 |
| 4 |
Synthesis and characterization of thermally curable 4-(1,2,2-trifluorovinyloxy)benzoyl substituted poly(4-vinylphenol) for gate insulator in thin film transistor
Ki G, Jang KS, Ka JW, Ahn T
Molecular Crystals and Liquid Crystals, 660(1), 33, 2018 |
| 5 |
The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
Rhee J, Choi S, Kang H, Kim JY, Ko D, Ahn G, Jung H, Choi SJ, Kim DM, Kim DH
Solid-State Electronics, 140, 90, 2018 |
| 6 |
Dendrons with urea/malonamide linkages for gate insulators of n-channel organic thin film transistors
Hsu YY, Yeh SC, Lin SH, Chen CT, Tung SH, Jeng RJ
Reactive & Functional Polymers, 108, 86, 2016 |
| 7 |
High performance top-gated indium-zinc-oxide thin film transistors with in-situ formed HfO2 gate insulator
Song Y, Zaslavsky A, Paine DC
Thin Solid Films, 614, 52, 2016 |
| 8 |
Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS-HEMTs
Downey BP, Meyer DJ, Katzer DS, Marron TM, Pan M, Gao X
Solid-State Electronics, 106, 12, 2015 |
| 9 |
Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator
Oikawa H, Akiyama R, Kanazawa K, Kuroda S, Harayama I, Nagashima K, Sekiba D, Ashizawa Y, Tsukamoto A, Nakagawa K, Ota N
Thin Solid Films, 574, 110, 2015 |
| 10 |
Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors
Yoo S, Yoon JY, Ryu J, Kim YH, Ka JW, Yi MH, Jang KS
Applied Surface Science, 313, 382, 2014 |
