검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching Son DH, Jo YW, Won CH, Lee JH, Seo JH, Lee SH, Lim JW, Kim JH, Kang IM, Cristoloveanu S, Lee JH Solid-State Electronics, 141, 7, 2018 |
| 2 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T Solid-State Electronics, 137, 1, 2017 |
| 3 |
The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors Do JW, Jung HW, Shin MJ, Ahn HK, Kim H, Kim RH, Cho KJ, Chang SJ, Min BG, Yoon HS, Kim JH, Yang JM, Lee JH, Lim JW Thin Solid Films, 628, 31, 2017 |
| 4 |
DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths Lin HK, Huang FH, Yu HL Solid-State Electronics, 54(5), 582, 2010 |
| 5 |
Physical study of the avalanche breakdown phenomenon in HEMTs Elkhou M, Rousseau M, Gerard H, De Jaeger JC Solid-State Electronics, 49(4), 535, 2005 |
| 6 |
0.15 mu m gate-length AlGaN/GaN HEMTs with varying gate recess length Kuliev A, Kumar V, Schwindt R, Selvanathan D, Dabiran AM, Chow P, Adesida I Solid-State Electronics, 47(1), 117, 2003 |
| 7 |
DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE Lee C, Lu W, Piner E, Adesida I Solid-State Electronics, 46(5), 743, 2002 |
| 8 |
Dry Photochemical Selective Etching of InGaAs/InAlAs in HBr Gas-Using a 172-nm Excimer Lamp Habibi S, Totsuka M, Tanaka J, Kinoshita T, Matsumoto S, Iida S Journal of Vacuum Science & Technology B, 13(2), 247, 1995 |
| 9 |
Investigation of Plasma Etch Induced Damage in Compound Semiconductor-Devices Shul RJ, Lovejoy ML, Hetherington DL, Rieger DJ, Vawter GA, Klem JF, Melloch MR Journal of Vacuum Science & Technology A, 12(4), 1351, 1994 |
| 10 |
Process Technology for InGaAs/InAlAs Modulation-Doped Field-Effect Transistors on InP Substrates Fink T, Raynor B, Haupt M, Kohler K, Braunstein J, Grun N, Hornung J Journal of Vacuum Science & Technology B, 12(6), 3332, 1994 |