화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements
Curley GA, Gatilova L, Guilet S, Bouchoule S, Gogna GS, Sirse N, Karkari S, Booth JP
Journal of Vacuum Science & Technology A, 28(2), 360, 2010
2 Investigation of InP etching mechanisms in a Cl-2/H-2 inductively coupled plasma by optical emission spectroscopy
Gatilova L, Bouchoule S, Guilet S, Chabert P
Journal of Vacuum Science & Technology A, 27(2), 262, 2009
3 Sidewall passivation assisted by a silicon coverplate during Cl-2-H-2 and HBr inductively coupled plasma etching of InP for photonic devices
Bouchoule S, Patriarche G, Guilet S, Gatilova L, Largeau L, Chabert P
Journal of Vacuum Science & Technology B, 26(2), 666, 2008