화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Arsenic doped buried plate characterization in deep trenches for a 0.25 mu m complementary metal-oxide-semiconductor technology by chemical etching
Kruger D, Gaworzewski P, Kurps R, Schmidt K, Luhmann C
Journal of Vacuum Science & Technology B, 18(1), 477, 2000
2 Electrical characterization of shallow pn junctions
Gaworzewski P, Tittelbach-Helmrich K, Jacob K, Muller B
Journal of Vacuum Science & Technology B, 16(1), 406, 1998
3 Atomic Layer Doping of SiGe by Low-Pressure (Rapid Thermal) Chemical-Vapor-Deposition
Tillack B, Kruger D, Gaworzewski P, Ritter G
Thin Solid Films, 294(1-2), 15, 1997
4 Characterization of B and Sb Delta-Doping Profiles in Si and Si1-xGex Alloys Grown by Molecular-Beam Epitaxy
Kruger D, Gaworzewski P, Kurps R, Zeindl HP
Journal of Vacuum Science & Technology B, 14(1), 341, 1996
5 Properties of Probe Tip Si Contacts and Their Connection to Spreading Resistance Analyses
Gaworzewski P, Roos B, Borngraber J, Hoppner K, Hoppner W, Henniger U
Journal of Vacuum Science & Technology B, 14(1), 373, 1996