| 1 |
Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures
Zheng HQ, Yoon SF, Gay BP, Mah KW, Radhakrishnan K, Ng GI
Journal of Crystal Growth, 216(1-4), 51, 2000 |
| 2 |
Effect of deep levels on the characteristics of InGa1-xP/In0.20Ca0.80As/GaAs high-electron mobility transistor grown by solid-source MBE
Yoon SF, Yip KH, Zheng HQ, Gay BP
Journal of Crystal Growth, 217(1-2), 33, 2000 |
| 3 |
A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor
Yoon SF, Kam AHT, Gay BP, Zheng HQ
Solid-State Electronics, 44(6), 1035, 2000 |
| 4 |
A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system
Yoon SF, Kam AHT, Gay BP, Zheng HQ
Solid-State Electronics, 44(7), 1267, 2000 |
| 5 |
Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy
Yoon SF, Yip KH, Zheng HQ, Gay BP
Solid-State Electronics, 44(11), 1909, 2000 |
