검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Growth of (root 3 x root 3)-Ag and (111) oriented Ag islands on Ge/Si(111) surfaces Roy A, Bhattacharjee K, Dev BN Applied Surface Science, 256(2), 508, 2009 |
| 2 |
Initial growth of titanium germanosilicide on Ge/Si(111) Yanagawa T, Nagai H, Ishii K, Matsumoto S Applied Surface Science, 175, 90, 2001 |
| 3 |
Comment on "Surface morphology and electronic structure of Ge/Si(111) 7 x 7 system" [A. Lobo et al., Appl. Surf. Sci. 173 (2001) 270] Rosei F, Fontana S Applied Surface Science, 183(3-4), 278, 2001 |
| 4 |
Instability of 2D Ge layer near the transition to 3D islands on Si(111) Shklyaev AA, Shibata M, Ichikawa M Thin Solid Films, 343-344, 532, 1999 |
| 5 |
Surfactant-grown low-doped germanium layers on silicon with high electron mobilities Hofmann KR, Reinking D, Kammler M, Horn-von Hoegen M Thin Solid Films, 321(1-2), 125, 1998 |