| 1 |
Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study
Teys SA
Applied Surface Science, 392, 1017, 2017 |
| 2 |
Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors
Kuo WC, Lee MJ, Wu ML, Lee CC, Tsao IY, Chang JY
Solid-State Electronics, 130, 41, 2017 |
| 3 |
Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system
Yang J, Zhao B, Wang C, Qiu F, Wang RF, Yang Y
Applied Surface Science, 386, 303, 2016 |
| 4 |
Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells
Raissi M, Regula G, Lazzari JL
Solar Energy Materials and Solar Cells, 144, 775, 2016 |
| 5 |
Strain-induced Ge segregation on Si at high temperatures
Shklyaev AA, Ponomarev KE
Journal of Crystal Growth, 413, 94, 2015 |
| 6 |
Charge carrier traffic at self-assembled Ge quantum dots on Si
Kaniewska M, Engstrom O, Karmous A, Oehme M, Petersson G, Kasper E
Solid-State Electronics, 83, 99, 2013 |
| 7 |
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy
Persichetti L, Sgarlata A, Fanfoni M, Balzarotti A
Thin Solid Films, 543, 88, 2013 |
| 8 |
Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
Shah VA, Dobbie A, Myronov M, Leadley DR
Thin Solid Films, 520(8), 3227, 2012 |
| 9 |
Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices
Schulze J, Oehme M, Werner J
Thin Solid Films, 520(8), 3259, 2012 |
| 10 |
Ge and GexSi1-x islands formation on GexSi1-x solid solution surface
Nikiforov AI, Timofeev VA, Teys SA, Gutakovsky AK, Pchelyakov OP
Thin Solid Films, 520(8), 3319, 2012 |
