검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
MBE-Enabling technology beyond Si CMOS Chang P, Lee WC, Lin TD, Hsu CH, Kwo J, Hong M Journal of Crystal Growth, 323(1), 511, 2011 |
| 2 |
Device performance of p-Ge MOSFETs at liquid nitrogen temperature Ohyama H, Sukizaki H, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Midorikawa C, Kuboyama S, De Jaeger B, Simoen E, Claeys C Thin Solid Films, 518(9), 2513, 2010 |
| 3 |
Interface control of high-k gate dielectrics on Ge Caymax M, Houssa M, Pourtois G, Bellenger F, Martens K, Delabie A, Van Elshocht S Applied Surface Science, 254(19), 6094, 2008 |
| 4 |
Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET Ikeda K, Maeda T, Takagi SI Thin Solid Films, 508(1-2), 359, 2006 |