검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe Park YW, Lee HS, Ahn HW, Wu Z, Lee S, Jeong JH, Jeong DS, Yi KW, Cheong BK Current Applied Physics, 10(1), E79, 2010 |
| 2 |
Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF Solid-State Electronics, 54(10), 1094, 2010 |
| 3 |
Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device Fu CH, Chang-Liao KS, Tsai KH, Wang TK, Lee YJ Solid-State Electronics, 53(8), 888, 2009 |