검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
High concentration phosphorus doping in Ge for CMOS-integrated laser applications Park CH, Yako M, Wada K, Ishikawa Y, Ahn D Solid-State Electronics, 154, 43, 2019 |
| 2 |
X-ray triple-axis diffractometry investigation of Si/SiGe/Si on silicon-on-insulator subjected to in situ low-temperature annealing Ma TD, Tu HL, Hu GY, Shao BL, Liu AS Applied Surface Science, 253(1), 124, 2006 |
| 3 |
Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells Zambrano RJ, Rubinelli FA, Arnoldbik WM, Rath JK, Schropp REI Solar Energy Materials and Solar Cells, 81(1), 73, 2004 |
| 4 |
Investigation of electrical properties of furnace grown gate oxide on strained-Si Bera LK, Mathew S, Balasubramanian N, Leitz C, Braithwaite G, Singaporewala F, Yap J, Carlin J, Langdo I, Lochtefeld T, Currie M, Hammond R, Fiorenza J, Badawi H, Bulsara M Thin Solid Films, 462-63, 85, 2004 |
| 5 |
In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001) Goldfarb I, Owen JHG, Bowler DR, Goringe CM, Hayden PT, Miki K, Pettifor DG, Briggs GAD Journal of Vacuum Science & Technology A, 16(3), 1938, 1998 |